三星k9系列flash memory读写程序-K9 Series Samsung flash memory to read and write procedures

大容量 FLASH 基础实验 读写串行存储器的程序-Experimental high-capacity FLASH based program memory read and write serial

本文档描述了如何利用ISE中软件开发环境SDK进行C编程对FLASH进行读写的方法，免去了自建IP核对flash进行读写的步骤，大大提高了效率-This doc show a method that can read and write flash memory easily using SDK develop environment of ISE. That make it no necessary to develop a IP core by yourself and improve t

16 Megabit (1 M x 16-bit/512 K x 32-Bit), amd 公司 2.5 V电压, flash存储器仿真读写verilog 模型。-16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory verilog model.